Title :
Dynamic SRAM stability characterization in 45nm CMOS
Author :
Seng Oon Toh;Zheng Guo;Borivoje Nikolić
Author_Institution :
Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 94720, USA
Abstract :
A method for characterizing dynamic SRAM stability using pulsed wordlines, is demonstrated in 45nm CMOS. Static read margins were observed to overestimate failures by up to 1000x while static write margins failed to predict outliers in dynamic write stability. Dynamic write stability was demonstrated to exhibit an enhanced sensitivity to process variations, and negative bias temperature instability (NBTI), compared to static write margins.
Keywords :
"Circuit stability","Stability analysis","Random access memory","Calibration","Thermal stability","Pulse generation","Correlation"
Conference_Titel :
VLSI Circuits (VLSIC), 2010 IEEE Symposium on
Print_ISBN :
978-1-4244-5454-9
DOI :
10.1109/VLSIC.2010.5560259
