Application of charge pumping technique for investigation of interface-trap behaviour during thermal annealing of irradiated power VDMOSFETs

A recently proposed charge-pumping technique for characterizing the Si-SiO/sub 2/ interface in power VDMOSFETs is applied in investigation of interface-trap behaviour during thermal annealing of /spl gamma/-ray irradiated power VDMOSFETs. The results are compared with those obtained by midgap method for determination of radiation-induced interface-trap densities. The applicability of charge pumping for providing the information on the number of interface traps at the interface between gate oxide and n/sup -/-epitaxial region of a VDMOSFET is demonstrated.