• DocumentCode
    3637739
  • Title

    The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs

  • Author

    M.B. Zivanov;L.D. Zivanov;J.Dj. Jovovic

  • Author_Institution
    Univ. of Novi Sad, Yugoslavia
  • Volume
    2
  • fYear
    1996
  • Firstpage
    357
  • Abstract
    In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.
  • Keywords
    "Gallium arsenide","Electrons","Doping","Neodymium","Energy states","Photonic band gap","Effective mass","Laser modes","Laser theory","Iron"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557395
  • Filename
    557395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3637739