Title :
The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs
Author :
M.B. Zivanov;L.D. Zivanov;J.Dj. Jovovic
Author_Institution :
Univ. of Novi Sad, Yugoslavia
Abstract :
In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.
Keywords :
"Gallium arsenide","Electrons","Doping","Neodymium","Energy states","Photonic band gap","Effective mass","Laser modes","Laser theory","Iron"
Conference_Titel :
Semiconductor Conference, 1996., International
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557395
