DocumentCode :
3638021
Title :
Simple electroabsorption model for germanium quantum well devices
Author :
Rebecca K. Schaevitz;Elizabeth H. Edwards;Ross M. Audet; Yiwen Rong;Shen Ren;Stephanie A. Claussen;Emel Tasyürek;Jonathan E. Roth;James S. Harris;David A. B. Miller
Author_Institution :
Edward L. Ginzton Laboratories, Stanford University, CA 94305-4088, USA
fYear :
2010
Firstpage :
109
Lastpage :
110
Abstract :
We present a simple electroabsorption model for germanium quantum wells to facilitate optical modulator design. We show this model is valid for a range of well sizes with an increased exciton-enhanced absorption for thinner wells.
Keywords :
"Absorption","Electric fields","Excitons","Silicon germanium","Modulation","Voltage measurement"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 10th International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-4244-7016-7
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2010.5595641
Filename :
5595641
Link To Document :
بازگشت