A theoretical study of effect of gate voltage on electron-modulated-acoustic-phonon interactions in silicon nanowire MOSFETs

We theoretically investigate the gate voltage dependence of the interaction between modulated acoustic phonons and electrons in SiO2-coated Si nanowires. The gate voltage decreases the form factor calculated with modulated acoustic phonons as well as that for bulk phonons. However, the relative difference between the two form factors, that is, the phonon modulation effect on the form factor becomes larger with increasing gate voltage. In addition, we evaluate the phonon modulation effect on the electron mobility in the Si nanowires, and reveal that the effect becomes smaller with increasing gate voltage.