DocumentCode :
3638176
Title :
Three-dimensional simulation of focused ion beam processing using the level set method
Author :
Otmar Ertl;Lado Filipović;Siegfried Selberherr
Author_Institution :
Institute for Microlectronics, TU Wien, Guß
fYear :
2010
Firstpage :
49
Lastpage :
52
Abstract :
Three-dimensional simulations of focused ion beam milling, which use the level set method for surface evolution, are presented for the first time. This approach allows the inherent description of topological changes. The surface rates are calculated using Monte Carlo ray tracing in order to incorporate shadowing as well as redeposition. Parallelization is used to reduce the computation time.
Keywords :
"Surface topography","Ion beams","Computational modeling","Pixel","Surface treatment","Milling","Ray tracing"
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
ISSN :
1946-1569
Print_ISBN :
978-1-4244-7701-2
Type :
conf
DOI :
10.1109/SISPAD.2010.5604573
Filename :
5604573
Link To Document :
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