• DocumentCode
    3638385
  • Title

    Stress dependent frequency shift in Si:Bi and Si:Sb THz lasers

  • Author

    Roman Kh. Zhukavin;K. A. Kovalevsky;V. V. Tsyplenkov;V. N. Shastin;S. G. Pavlov;U. Böttger;N. Nötzel;H. Riemann;N. V. Abrosimov;H.-W. Hübers

  • Author_Institution
    Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, GSP-105, Nizhny Novgorod, Russia
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    It has been demonstrated that external uniaxial stress applied to silicon crystals doped by bismuth and antimony influences on the emission spectrum of intracenter lasers under CO2 laser pumping. For small stress the spin-orbit coupling of lower laser working states can be tuned. The details of frequency change depend on crystallographic orientation and donor element.
  • Keywords
    "Stress","Laser excitation","Silicon","Pump lasers","Laser tuning","Laser transitions","Bismuth"
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4244-6655-9
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612341
  • Filename
    5612341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3638385