DocumentCode :
3638489
Title :
Analysis and demonstration of MEM-relay power gating
Author :
Hossein Fariborzi;Matthew Spencer;Vaibhav Karkare;Jaeseok Jeon;Rhesa Nathanael; Chengcheng Wang;Fred Chen;Hei Kam;Vincent Pott;Tsu-Jae King Liu;Elad Alon;Vladimir Stojanović;Dejan Marković
Author_Institution :
MIT, Cambridge, MA
fYear :
2010
Firstpage :
1
Lastpage :
4
Abstract :
This paper shows that due to their negligibly low leakage, in certain applications, chips utilizing power gates built even with today´s relatively large, high-voltage micro-electro-mechanical (MEM) relays can achieve lower total energy than those built with CMOS transistors. A simple analysis provides design guidelines for off-time and savings estimates as a function of technology parameters, and quantifies the further benefits of scaled relay designs. Finally, we demonstrate a relay chip successfully power-gating a CMOS chip, and show a relay-based timer suitable for self-timed operation.
Keywords :
"Relays","Logic gates","CMOS integrated circuits","Power MOSFET","Capacitance","CMOS technology"
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
ISSN :
0886-5930
Print_ISBN :
978-1-4244-5758-8
Electronic_ISBN :
2152-3630
Type :
conf
DOI :
10.1109/CICC.2010.5617380
Filename :
5617380
Link To Document :
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