Electro-thermal characterization and simulation of integrated multi trenched XtreMOS power devices

This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi-trenched XtreMOS devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is collected through on-chip sensors -and through a full surface high resolution transient interferometric mapping (TIM). For the first time a data driven segmented electro-thermal transient model is proposed to describe accurately the thermal profile behavior for the mutli-trenched devices. Further investigations of the thermal heating impact on the driver due to the low thermal conductivity of the trenches (SiO2) have been carried out.