DocumentCode
3638920
Title
Intervalley scattering and field screening in germanium/silicon-germanium quantum wells
Author
Emel Taşyürek;Stephanie A. Claussen;Jonathan E. Roth;David A. B. Miller
Author_Institution
Electrical Engineering Department, Edward L. Ginzton Laboratory, Stanford University, Stanford, CA
fYear
2010
Firstpage
278
Lastpage
280
Abstract
The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ∼250 fs. Carrier field screening is also observed and modeled.
Keywords
"Scattering","Absorption","Excitons","Laser excitation","Measurement by laser beam","Silicon germanium","Bleaching"
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Print_ISBN
978-1-4244-6344-2
Type
conf
DOI
10.1109/GROUP4.2010.5643355
Filename
5643355
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