DocumentCode :
3639071
Title :
Differences in the gas sensing properties readout with n and p-type MOX materials
Author :
C. E. Simion;A. Tomescu-Stanoiu
Author_Institution :
National Institute of Materials Physics, P.O. Box MG-7, 077125 Bucharest-Magurele, Romania
Volume :
1
fYear :
2010
Firstpage :
201
Lastpage :
204
Abstract :
The way in which surface changes are transduced into a variation of an electrical parameter (often electrical resistance) depends on the surface oxidation level, material morphology its semiconductor behaviour, etc. Therefore, if one wants to understand more about the way in which gas-surface interactions affect the gas sensing properties of material, complex phenomenological and spectroscopic investigations are needed. Herein, by simultaneous DC and relative work function investigations we could explain the differences induced by the MOX semiconductor character (n and p-type) to the surface phenomena transduction mechanism.
Keywords :
"Materials","Surface resistance","Sensors","Surface morphology","Surface treatment","Semiconductor device measurement"
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5649077
Filename :
5649077
Link To Document :
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