• DocumentCode
    3639417
  • Title

    Investigation of deep energy levels in heterostructures based on GaN by DLTS

  • Author

    Ľ. Stuchliková;J. Šebok;J. Rybár;M. Petrus;M. Nemec;L. Harmatha;J. Benkovská;J. Kováč;J. Škriniarová;T. Lalinský;R. Paskiewicz;M. Tlaczala

  • Author_Institution
    Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovič
  • fYear
    2010
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    In this paper we report our results of DLTS investigations of deep-level defects in Schottky-gate AlGaN/GaN LP-MOVPE structures grown on sapphire substrate. The exact location of heterostructure´s interface below the surface (20 nm) was determined from the concentration profile to depletion region width dependence. The free charge carrier density was calculated (n2D = 4.75÷5.09×1016 m−2). Four deep energy levels have been identified from selected DLTFS spectra (activation energies: E1=EC−0.545 eV, E2=EC−0.599 eV, E3=EC−0.642 eV, and E4=EC-1,118 eV).
  • Keywords
    "Gallium nitride","Semiconductor device measurement","Temperature measurement","Aluminum gallium nitride","Transient analysis","Energy states","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
  • Print_ISBN
    978-1-4244-8574-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.2010.5666319
  • Filename
    5666319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3639417