Analysis of structure geometry and interface charge on electrical characteristics of InAlN/GaN HEMTs

In this paper the results obtained from simulations and measurements on InAlN/GaN HEMTs are presented. The HEMT material structure was modelled by Synopsys TCAD tools and electrical characteristics of the device were simulated by DESSIS. Several effects of the geometry and concentration of interface charges on the electrical characteristics are studied. The interface and surface charges as well as deep level traps were taken into account for the numerical simulations. An influence of variation of several structure parameters on the transfer and output characteristics was studied. The results can contribute to better understanding and further calibration of electro physical models used for InAlN/GaN heterostructures.