DocumentCode
3639421
Title
Study of ZnO films grown with different dopants - physical properties and their comparison
Author
L. Prušáková;M. Netrvalová;P. Šutta
Author_Institution
University of West Bohemia, New Technology Research Centre Univerzitni 8, 306 14 Plzen, Czech Republic
fYear
2010
Firstpage
179
Lastpage
182
Abstract
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2 O3 (2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence on doping element. The XRD analyses, four probe measurements and UV-VIS spectroscopy were applied to investigate the structure (texture, lattice stress, grain size), electrical (resistivity) and optical (transmittance, optical band gap) properties of TCOs on the glass substrates.
Keywords
"Zinc oxide","Films","Substrates","Gallium","Lattices","Conductivity","Stress"
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Print_ISBN
978-1-4244-8574-1
Type
conf
DOI
10.1109/ASDAM.2010.5666334
Filename
5666334
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