Patterning of nanometer structures by using direct-write e-beam lithography for the sensor development

In this work, the optimalisation of e-beam parameters and the writing strategy have been performed. Various positive and negative e-beam resists have been evaluated for high resolution e-beam lithography and pattern transfer. Both, lift-off method and ion beam etching have been investigated for the pattern transfer into thin Pt and MoC layer on saphire substrate.