RuO2/TiO2 based MIM capacitors for DRAM application

MIM capacitors with MOCVD-grown RuO2 bottom electrode, ALD-grown TiO2 rutile dielectric and RuO2 and Pt top electrodes were prepared and characterised by the means of C-V and J-V measurements. Dielectric constants were in the range of 140, which correspond to EOT of 0.5 nm and leakage current density as low as 1.5*10⁻⁶ A/cm² was achieved. Strong influence of TiO2 stoichiometry on the leakage currents was found and analysed.