DocumentCode :
3639448
Title :
Characterization of high permittivity GdScO3 films prepared by liquid injection MOCVD
Author :
M Jurkovič;K Hušeková;K Čičo;E Dobročka;M Nemec;J Fedor;K Fröhlich
Author_Institution :
Institute of Electrical Engineering, Slovak Academy of Sciences, Dú
fYear :
2010
Firstpage :
247
Lastpage :
250
Abstract :
We present electrical characterization of Si(p)/GdScO3/Ru metal-oxide-semiconductor structures prepared by liquid injection metal organic chemical vapour deposition. Capacitance-voltage measurement revealed dielectric constant κ=22. Density of interface states was determined using conductance measurement. Annealing in forming gas resulted in decrease of the interface state density in the middle of the Si band-gap to 5 * 1011 eV−1cm−2.
Keywords :
"Films","Semiconductor device measurement","Interface states","Dielectric constant","Annealing","Capacitance-voltage characteristics","Mathematical model"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Print_ISBN :
978-1-4244-8574-1
Type :
conf
DOI :
10.1109/ASDAM.2010.5667014
Filename :
5667014
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3639448
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