DocumentCode
3639783
Title
Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors
Author
M. Dominguez Jimenez;P. Rosales-Quintero;A. Torres-Jacome;J. Molina-Reyes;M. Moreno-Moreno;F. J. De la Hidalga-Wade;C. Zuniga-Islas;W. Calleja-Arriaga
Author_Institution
Dept. of Electron., Nat. Inst. for Astrophys., Opt. &
fYear
2010
Firstpage
741
Lastpage
744
Abstract
In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO2. We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe: H TFTs.
Keywords
"Logic gates","Insulators","Films","Thin film transistors","Refractive index","Threshold voltage","Semiconductor device measurement"
Publisher
ieee
Conference_Titel
Electronics, Robotics and Automotive Mechanics Conference (CERMA), 2010
Print_ISBN
978-1-4244-8149-1
Type
conf
DOI
10.1109/CERMA.2010.87
Filename
5692428
Link To Document