Title :
Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements
Author :
A. Boubals;K. Bertling;Hiroshi Domyo;A. Brawley;A.D. Rakić;Y.T. Yeow
Author_Institution :
Université
Abstract :
This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET.
Keywords :
"Semiconductor device measurement","Length measurement","Logic gates"
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Print_ISBN :
978-1-4244-7334-2
DOI :
10.1109/COMMAD.2010.5699709
