Title :
On relation between detection parameters of SI GaAs particle detectors and physical properties of starting materials
Author :
F. Dubecky;J. Darmo;M. Krempasky;J. Betko;I. Besse;M. Pikna;A. Satka;J. Oswald;P.G. Pelfer
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
The role of deep levels and material inhomogeneities is studied in regard to their influence on the parameters of Cr-doped and undoped bulk semi-insulating GaAsb-based particle detectors. It is shown that the charge collection efficiency and the energy resolution of detectors is strongly affected by physical properties of starting material.
Keywords :
"Gallium arsenide","Radiation detectors","Pollution measurement","Energy resolution","Semiconductor materials","Crystalline materials","Conductivity","Hall effect","Wavelength measurement","Physics"
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570881
