• DocumentCode
    3640100
  • Title

    Characterisation of deep-level defects in semi-insulating GaAs and InP by high resolution photoinduced transient spectroscopy (HRPITS)

  • Author

    P. Kaminski;M. Pawlowski;R. Cwirko;M. Palczewska;R. Kozlowski

  • Author_Institution
    Inst. of Electron. Mater. Technol., Warsaw, Poland
  • fYear
    1996
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    Deep levels in undoped semi-insulating (SI) GaAs and Fe-doped SI InP investigated by photoinduced transient spectroscopy (PITS). It is demonstrated that the resolution of this method can be improved by direct computer fitting of digitally recorded photocurrent decays.
  • Keywords
    "Gallium arsenide","Indium phosphide","Photoconductivity","Spectroscopy","Electron mobility","Temperature","Electron traps","Electron emission","Military computing","Charge carriers"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
  • Print_ISBN
    0-7803-3179-6
  • Type

    conf

  • DOI
    10.1109/SIM.1996.570926
  • Filename
    570926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3640100