DocumentCode
3641295
Title
A resistorless current reference source for 65 nm CMOS technology with low sensitivity to process, supply voltage and temperature variations
Author
Michał Łukaszewicz;Tomasz Borejko;Witold A. Pleskacz
Author_Institution
Institute of Microelectronics &
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
75
Lastpage
79
Abstract
A reistorless current reference source, e.g. for fast communication interfaces, has been described. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 55 ppm/°C temperature coefficient over range of -40°C to 125°C. Reference current susceptibility to process parameters variation is ±3 %. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -127 dB and -103 dB, respectively.
Keywords
"Threshold voltage","MOSFETs","Temperature sensors","Dispersion","CMOS integrated circuits","Temperature distribution"
Publisher
ieee
Conference_Titel
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2011 IEEE 14th International Symposium on
Print_ISBN
978-1-4244-9755-3
Type
conf
DOI
10.1109/DDECS.2011.5783051
Filename
5783051
Link To Document