• DocumentCode
    3641295
  • Title

    A resistorless current reference source for 65 nm CMOS technology with low sensitivity to process, supply voltage and temperature variations

  • Author

    Michał Łukaszewicz;Tomasz Borejko;Witold A. Pleskacz

  • Author_Institution
    Institute of Microelectronics &
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    75
  • Lastpage
    79
  • Abstract
    A reistorless current reference source, e.g. for fast communication interfaces, has been described. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 55 ppm/°C temperature coefficient over range of -40°C to 125°C. Reference current susceptibility to process parameters variation is ±3 %. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -127 dB and -103 dB, respectively.
  • Keywords
    "Threshold voltage","MOSFETs","Temperature sensors","Dispersion","CMOS integrated circuits","Temperature distribution"
  • Publisher
    ieee
  • Conference_Titel
    Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2011 IEEE 14th International Symposium on
  • Print_ISBN
    978-1-4244-9755-3
  • Type

    conf

  • DOI
    10.1109/DDECS.2011.5783051
  • Filename
    5783051