• DocumentCode
    3642859
  • Title

    Study of photoadmittance and admittance of porous silicon layers

  • Author

    Andrzej Korcala;Zbigniew Łukasiak;Anna Zawadzka;Przemyslaw Płóciennik;Krzysztof Bartkiewicz;Waclaw Bała

  • Author_Institution
    Institute of Physics, N. Copernicus University, Grudzią
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, we investigated electrical properties of Al/PS/p-Si structures. Admittance spectroscopy is one of the major semiconductor diagnostic techniques. Frequency, voltage and wavelengths dependencies of admittance will be analyzed in detail. It will be useful for better understanding of fundamental electrical properties of porous silicon.
  • Keywords
    "Silicon","Integrated circuit modeling","Admittance","Gas detectors","Spectroscopy","Capacitance","Shape"
  • Publisher
    ieee
  • Conference_Titel
    Transparent Optical Networks (ICTON), 2011 13th International Conference on
  • ISSN
    2161-2056
  • Print_ISBN
    978-1-4577-0881-7
  • Electronic_ISBN
    2161-2064
  • Type

    conf

  • DOI
    10.1109/ICTON.2011.5971180
  • Filename
    5971180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3642859