• DocumentCode
    3643109
  • Title

    Impact of random telegraph signaling noise on SRAM stability

  • Author

    Seng Oon Toh;Tsu-Jae King Liu;Borivoje Nikolić

  • Author_Institution
    Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 94720, USA
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    204
  • Lastpage
    205
  • Abstract
    Large-signal bias and temperature dependences of random telegraph signaling (RTS) noise in transistors and their impact on the dynamic stability of 6T SRAM cells are investigated. RTS causes fluctuations in SRAM stability that are dependent on cell access history and trap characteristics. Access patterns for characterizing the worst-case and best-case dynamic stability are developed.
  • Keywords
    "Random access memory","Thermal stability","Temperature dependence","Transistors","Fluctuations","Circuit stability","Very large scale integration"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2011 Symposium on
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4244-9949-6
  • Electronic_ISBN
    2158-9682
  • Type

    conf

  • Filename
    5984707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3643109