DocumentCode :
3643429
Title :
Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays
Author :
P. Voss;K.H. Maier;W. Meczynski;H.W. Becker;E. Normand;J.L. Wert;D.I. Oberg;P.P. Majewski
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
fYear :
1997
Firstpage :
169
Lastpage :
172
Abstract :
High-voltage diodes with active areas between 1 cm/sup 2/ and 32 cm/sup 2/ were irradiated either with carbon ions having energies between 17 MeV and 252 MeV or /spl alpha/-particles of 98 MeV or neutrons with energies up to 800 MeV. As the voltage across the devices was raised all of them failed eventually, even if there was a 1 MOhm resistor in series. With the high-energy carbon ions it could be shown that the failure can be triggered at locations that are hundreds of microns away from the pn-junction. The neutron experiment indicates that there may be a steep fall-off in failure rate at the lowest voltages.
Keywords :
"Voltage","Neutrons","Cosmic rays","Failure analysis","Shape","Single event upset","Semiconductor diodes","Resistors","Microscopy","Predictive models"
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC´s, 1997. ISPSD ´97., 1997 IEEE International Symposium on
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601462
Filename :
601462
Link To Document :
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