Title : 
Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays
         
        
            Author : 
P. Voss;K.H. Maier;W. Meczynski;H.W. Becker;E. Normand;J.L. Wert;D.I. Oberg;P.P. Majewski
         
        
            Author_Institution : 
Hahn-Meitner-Inst., Berlin, Germany
         
        
        
        
        
            Abstract : 
High-voltage diodes with active areas between 1 cm/sup 2/ and 32 cm/sup 2/ were irradiated either with carbon ions having energies between 17 MeV and 252 MeV or /spl alpha/-particles of 98 MeV or neutrons with energies up to 800 MeV. As the voltage across the devices was raised all of them failed eventually, even if there was a 1 MOhm resistor in series. With the high-energy carbon ions it could be shown that the failure can be triggered at locations that are hundreds of microns away from the pn-junction. The neutron experiment indicates that there may be a steep fall-off in failure rate at the lowest voltages.
         
        
            Keywords : 
"Voltage","Neutrons","Cosmic rays","Failure analysis","Shape","Single event upset","Semiconductor diodes","Resistors","Microscopy","Predictive models"
         
        
        
            Conference_Titel : 
Power Semiconductor Devices and IC´s, 1997. ISPSD ´97., 1997 IEEE International Symposium on
         
        
        
            Print_ISBN : 
0-7803-3993-2
         
        
        
            DOI : 
10.1109/ISPSD.1997.601462