Title :
An improvement on p-channel SOI LIGBT by adopting slit type p-drift structure
Author :
H. Akiyama;K. Watabe;T. Terashima;M. Okada;S. Nobuto;M. Yamawaki;T. Hirao
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A new p-channel slit type p-drift lateral IGBT (p-ch SD-LIGBT) is described. This device is fabricated with thick buried-oxide SOI, using 0.8 /spl mu/m CMOS process. The improvement of slit type p-drift structure makes it possible to realize excellent characteristics in the trade-off between breakdown voltage and on-state current relationship compared with p-ch conventional SOI-LIGBT. Furthermore, measured characteristics are reported for p-ch SOI-LIGBT with a breakdown voltage of more than 500 V for the first time.
Keywords :
"Insulated gate bipolar transistors","CMOS process","Voltage","Electric breakdown","Time measurement","Driver circuits","Inverters","Fabrication","Costs","Degradation"
Conference_Titel :
Power Semiconductor Devices and IC´s, 1997. ISPSD ´97., 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601516
