Title :
Modeling of parasitic phenomena in trench technology
Author :
Dušan Prejda;Jiří Slezák;Stanislav Banáš
Author_Institution :
Device Development &
fDate :
6/1/2011 12:00:00 AM
Abstract :
The paper describes SPICE modeling of a substrate PNP transistor in a bipolar technology that makes use of trench isolation. This parasitic transistor gives rise to a significant increase of the collector current in measured output characteristics at about Vce=-2V. Measured Gummel plots also showed non-standard behavior at Vce >; -2V. A physical basis of the electrical behavior was determined and captured by a SPICE macro model.
Keywords :
"Integrated circuit modeling","MOSFETs","Switches","Substrates","SPICE","Data models"
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Print_ISBN :
978-1-4577-0304-1
