Rapid and Accurate Leakage Power Estimation for Nano-CMOS Circuits

This paper addresses the crucial problem of static power reduction for circuits implemented in nano-CMOS technologies. Its solution requires accurate and rapid power estimation, but the known power simulators are not accurate and quick at the same time. The paper proposes and discusses a new rapid and very accurate leakage power estimation method and related simulator. The maximum estimation error of the simulator is within 5%, with an average error of only 0.57%, and run-times in the range of seconds, while for the same circuits HSPICE runs for hours or days.