DocumentCode :
3643781
Title :
Elimination of an impact of mechanical stresses on an operation of nitride light-emitting diodes
Author :
S. Morawiec;R. P. Sarzała;W. Nakwaski
Author_Institution :
Photonics Group, Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, 90-924 Lodz, Poland
fYear :
2011
Firstpage :
79
Lastpage :
80
Abstract :
In designing of nitride light-emitting diodes, the semi-polar InAlGaN substrate is proposed to fully eliminate polarization effects.
Keywords :
"Substrates","Gallium nitride","Light emitting diodes","Lattices","Crystals","Tensile stress"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2011.6041148
Filename :
6041148
Link To Document :
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