DocumentCode :
3643783
Title :
Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
Author :
J. Pal;G. Tse;S. Tomić;M. A. Migliorato
Author_Institution :
School of Electrical and Electronic Engineering, the University of Manchester, Manchester, M13 9PL, UK
fYear :
2011
Firstpage :
155
Lastpage :
156
Abstract :
We investigate the effects of linear and non linear piezoelectricity in wurtzite III-N semiconductors and their influence on the electronic properties of low dimensional quantum dots. By studying the dependence of the biexciton on structural and geometrical parameters of the nanostructure, we show second order to be important particularly when the strain in the nanostructure is reduced.
Keywords :
"Gallium nitride","Quantum dots","Strain","Piezoelectric effect","Nanoscale devices","Metals"
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
ISSN :
2158-3234
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2011.6041191
Filename :
6041191
Link To Document :
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