DocumentCode :
3644093
Title :
Design of high power S-band GaN MMIC power amplifiers for WiMAX applications
Author :
Ömer Cengiz;Özgür Kelekçi;Galip Orkun Ar´can;Ekmel Özbay;Osman Palamutçuoğullari
Author_Institution :
Bilkent University, Nanotechnology Research Center, 06800, Bilkent, Ankara, Turkey
fYear :
2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of these MMICs were combined by using off-chip Lange Couplers, 45.3 dBm output power with a 45%PAE @3.5 Ghz and 16 dB small signal gain were obtained with less than 0.2 dB gain ripple in the 3.3-3.8 GHz frequency range.
Keywords :
"Gallium nitride","MMICs","Couplers","Gain","Power amplifiers","Simulation","Power generation"
Publisher :
ieee
Conference_Titel :
General Assembly and Scientific Symposium, 2011 XXXth URSI
Print_ISBN :
978-1-4244-5117-3
Type :
conf
DOI :
10.1109/URSIGASS.2011.6050546
Filename :
6050546
Link To Document :
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