Title :
The effects of tensile-strain conditions on doping density requirements for Ge-based injection lasers
Author :
O. Aldaghri;Z. Ikonić;R. W. Kelsall
Author_Institution :
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT, United Kingdom
Abstract :
The doping density required for filling the indirect valleys up to the direct valley in Ge bulk and quantum wells under various tensile-strain conditions is investigated, and the optimum cases for Ge lasers identified.
Keywords :
"Doping","Tensile strain","Photonic band gap","Silicon","Sun"
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053746
