DocumentCode :
3644148
Title :
Electroluminescence from Er doped SiO2/nc-Si multilayers under lateral carrier injection
Author :
Karl S. Ni;Halina Krzyzanowska;Yijing Fu;Philippe M. Fauchet
Author_Institution :
Department of Electrical and Computer Engineering, University of Rochester, NY 14627, USA
fYear :
2011
Firstpage :
202
Lastpage :
204
Abstract :
Light emitting p-i-n diodes consisting of Er-doped SiO2/nc-Si multilayers and a novel lateral electrical pumping geometry are demonstrated in forward bias. Erbium electroluminescence and photoluminescence spectra are identical.
Keywords :
"Silicon","Erbium","Nonhomogeneous media","Electrodes","Electroluminescence","Photonics","Current density"
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053763
Filename :
6053763
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3644148
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