Title :
Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping
Author :
M. Poljak;V. Jovanović;T. Suligoj
Author_Institution :
FER-ZEMRIS, University of Zagreb, Croatia
Abstract :
Our modeling reproduces experimental data for TSi of 2.3-32 nm, including the μh enhancement effect in low-doped devices for TSi of 3.6 nm. For the first time, anomalous μh behavior in highly-doped UTB devices (NB >; 1017 cm-3) is revealed. Information presented herein could be valuable for the design of extremely-scaled UTB SOI and FinFET devices.
Keywords :
"Niobium","MOSFETs","Silicon","Scattering","Semiconductor process modeling","Optical surface waves","Educational institutions"
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Print_ISBN :
978-1-61284-761-0
DOI :
10.1109/SOI.2011.6081691
