Title :
Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm
Author :
M. Poljak;V. Jovanović;T. Suligoj
Author_Institution :
FER-ZEMRIS, University of Zagreb, Croatia
Abstract :
Behavior of electron mobility in UTB InGaAs-OI MOSFETs is studied by physics-based modeling. We have shown that UTB InGaAs-OI devices outperform Silicon-OI MOSFETs only for Ts >; 6.2 nm, due to high SR scattering. Therefore, improvement of interface quality remains crucial to utilize high electron mobility in extremely scaled InGaAs-OI devices.
Keywords :
"MOSFETs","Electron mobility","Scattering","Indium gallium arsenide","Strontium","Gallium arsenide"
Conference_Titel :
SOI Conference (SOI), 2011 IEEE International
Print_ISBN :
978-1-61284-761-0
DOI :
10.1109/SOI.2011.6081700
