• DocumentCode
    3644758
  • Title

    Monolithically integrated MSM-PD/HEMT photoreceiver prepared on identical InP/InGaAs 2DEG heterostructure

  • Author

    P. Kordos;M. Horstmann;M. Marso;K. Schimpf

  • Author_Institution
    Res. Centre, Inst. of Thin Film & Ion Technol., Julich, Germany
  • fYear
    1996
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    A new approach of the preparation of monolithically integrated photoreceiver is described. The photodetector and the amplifier consist of an identical InP/InGaAs heterostructure. An optimal layer structure with 150 nm thick InGaAs absorption region above the 2DEG is found. The MSM-PD exhibit 0.26 A/W responsivity and 16 GHz bandwidth. The pHEMT shows f/sub T//f/sub max/ of 45/85 GHz. The measured bandwidth of the photoreceiver is 7 GHz and a bandwidth of 15 GHz follows from the simulation on optimized circuit.
  • Keywords
    "HEMTs","Indium phosphide","Indium gallium arsenide","Bandwidth","Circuits","Photodetectors","Diodes","Absorption","Manufacturing","Costs"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610056
  • Filename
    610056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3644758