DocumentCode :
3644866
Title :
Magnetotransport properties of grating-gate THz detectors based on high electron mobility GaN/AlGaN heterostructures
Author :
K. Nogajewski;K. Karpierz;M. Grynberg;W. Knap;R. Gaska;J. Yang;M. S. Shur;J. Łusakowski
Author_Institution :
Institute of Experimental Physics, University of Warsaw, Warsaw Poland
fYear :
2011
Firstpage :
1
Lastpage :
2
Abstract :
We report on magnetotransport characterization of grating-gate GaN/AlGaN-based THz detectors. Results of our experiments show that depending on the geometry of a grating, 2D electron channel may be divided into gated and ungated regions with different concentrations and mobilities of the carriers.
Keywords :
"Logic gates","Transistors","Gratings","Oscillators","Magnetic fields","Plasmons","Gallium nitride"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104919
Filename :
6104919
Link To Document :
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