• DocumentCode
    3644866
  • Title

    Magnetotransport properties of grating-gate THz detectors based on high electron mobility GaN/AlGaN heterostructures

  • Author

    K. Nogajewski;K. Karpierz;M. Grynberg;W. Knap;R. Gaska;J. Yang;M. S. Shur;J. Łusakowski

  • Author_Institution
    Institute of Experimental Physics, University of Warsaw, Warsaw Poland
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on magnetotransport characterization of grating-gate GaN/AlGaN-based THz detectors. Results of our experiments show that depending on the geometry of a grating, 2D electron channel may be divided into gated and ungated regions with different concentrations and mobilities of the carriers.
  • Keywords
    "Logic gates","Transistors","Gratings","Oscillators","Magnetic fields","Plasmons","Gallium nitride"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104919
  • Filename
    6104919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3644866