Modelling of hemispherical ground inhomogeneities

The influence of a semi-conducting hemispherical inhomogeneity on ground electrode placed inside of it, is analyzed. The applied procedure is based on a recently proposed approximate Green´s function for the point source inside a semiconducting hemisphere. The results are compared with those obtained by other two different models based on application of the boundary elements method, i.e. the Green´s function for the point source inside a double-layered hemispherical inhomogeneity.