CMOS integrated antenna-coupled field-effect-transistors for the detection of 0.2 to 4.3 THz

Distributed phenomena permit the use of field-effect transistors for the detection of frequencies far beyond transistor cut-off. This contribution gives details on an improved design for patch antenna-coupled field-effect-transistors and shows sensitive detection from 0.2 to 4.3 THz for monolithically integrated devices relying on commercial 0.15-μm CMOS process technology. Room-temperature responsivity values of 1344 V/W at 585 GHz, 90 V/W at 3.1 THz and 11 V/W at 4.3 THz are reported (values acquired at optimum operational point). A minimum optical noise-equivalent-power (NEP) of 163 pW/√Hz at 3.1 THz is reported (All values are normalized to the physical antenna area).