DocumentCode :
3646873
Title :
Study of semiconductor devices from ab initio theory
Author :
M. Gonzalez-Diaz;P. Rodriguez-Hernandez;A. Munoz
Author_Institution :
Dept. de Fisica Fundamental y Exp., Univ. de La Laguna, Spain
fYear :
1997
Firstpage :
151
Lastpage :
154
Keywords :
"Semiconductor devices","Heterojunctions","Atomic layer deposition","Gallium arsenide","Density functional theory","Chemical analysis","Molecular beam epitaxial growth","Computer interfaces","Geometry","Electron microscopy"
Publisher :
ieee
Conference_Titel :
Frontiers in Electronics, 1997. WOFE ´97. Proceedings., 1997 Advanced Workshop on
Print_ISBN :
0-7803-4059-0
Type :
conf
DOI :
10.1109/WOFE.1997.621185
Filename :
621185
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3646873
