Title :
A Study on the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET: Perspectives for 0.25 V Supply Voltage Applications
Author :
Livio Lattanzio;Nilay Dagtekin;Luca De Michielis;Adrian M. Ionescu
Author_Institution :
Nanoelectronic Devices Lab., EPFL, Lausanne, Switzerland
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this work, we show that through appropriate optimization of the Ge EHBTFET it is possible to achieve superior static characteristics for low supply voltage applications, when compared to a doublegate Ge MOSFET with similar geometry. The tool used to perform the simulations in this paper is Synopsys Sentaurus Device E-2010.12.
Keywords :
"MOSFET circuits","Inverters","Logic gates","Tunneling","Delay","Switches","FETs"
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Print_ISBN :
978-1-4577-1864-9
DOI :
10.1109/ISTDM.2012.6222484
