• DocumentCode
    3646989
  • Title

    A Study on the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET: Perspectives for 0.25 V Supply Voltage Applications

  • Author

    Livio Lattanzio;Nilay Dagtekin;Luca De Michielis;Adrian M. Ionescu

  • Author_Institution
    Nanoelectronic Devices Lab., EPFL, Lausanne, Switzerland
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we show that through appropriate optimization of the Ge EHBTFET it is possible to achieve superior static characteristics for low supply voltage applications, when compared to a doublegate Ge MOSFET with similar geometry. The tool used to perform the simulations in this paper is Synopsys Sentaurus Device E-2010.12.
  • Keywords
    "MOSFET circuits","Inverters","Logic gates","Tunneling","Delay","Switches","FETs"
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Print_ISBN
    978-1-4577-1864-9
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222484
  • Filename
    6222484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3646989