• DocumentCode
    3647012
  • Title

    High-frequency multi-bias small-signal neural modeling for FinFET

  • Author

    Z. Marinković;G. Crupi;D. M. M.-P. Schreurs;A. Caddemi;V. Marković

  • Author_Institution
    Department of Telecommunications, Faculty of Electronic Engineering, University of Niš
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    In this paper we extract and validate a small-signal neural model for FinFETs. Namely, artificial neural networks are used for modeling the dependence of the small-signal admittance parameters for a FinFET on bias voltages and frequency. The model is developed for the actual transistor, which is obtained after de-embedding the effects of the probe pads, transmission lines, and substrate. The extracted model is validated in a wide range of operating bias conditions up to 50 GHz.
  • Keywords
    "FinFETs","Artificial neural networks","Transmission line measurements","Microwave measurements","Integrated circuit modeling","Mathematical model","Neurons"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (MIEL), 2012 28th International Conference on
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0237-1
  • Type

    conf

  • DOI
    10.1109/MIEL.2012.6222850
  • Filename
    6222850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647012