Title :
High-frequency multi-bias small-signal neural modeling for FinFET
Author :
Z. Marinković;G. Crupi;D. M. M.-P. Schreurs;A. Caddemi;V. Marković
Author_Institution :
Department of Telecommunications, Faculty of Electronic Engineering, University of Niš
fDate :
5/1/2012 12:00:00 AM
Abstract :
In this paper we extract and validate a small-signal neural model for FinFETs. Namely, artificial neural networks are used for modeling the dependence of the small-signal admittance parameters for a FinFET on bias voltages and frequency. The model is developed for the actual transistor, which is obtained after de-embedding the effects of the probe pads, transmission lines, and substrate. The extracted model is validated in a wide range of operating bias conditions up to 50 GHz.
Keywords :
"FinFETs","Artificial neural networks","Transmission line measurements","Microwave measurements","Integrated circuit modeling","Mathematical model","Neurons"
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222850
