• DocumentCode
    3647013
  • Title

    Preparation of shell nanocrystalline Ga-doped ZnO ultra-thin films by sputtering

  • Author

    I. Novotný;V. Tvarožek;P. Šutta;M. Netrvalová;J. Novák;I. Vávra;P. Eliáš

  • Author_Institution
    Institute of Electronics and Photonics, Slovak University of Technology, Ilkovič
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    271
  • Abstract
    In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven.
  • Keywords
    "Sputtering","Films","Zinc oxide","Nanowires","Photovoltaic cells","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (MIEL), 2012 28th International Conference on
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0237-1
  • Type

    conf

  • DOI
    10.1109/MIEL.2012.6222851
  • Filename
    6222851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647013