DocumentCode
3647015
Title
Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy
Author
M. Luňák;Z. Chobola;J. Vaněk;E. Hulicius
Author_Institution
Stavební
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
343
Lastpage
346
Abstract
Transport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.
Keywords
"Noise","Resistance","Diode lasers","Vertical cavity surface emitting lasers","Junctions"
Publisher
ieee
Conference_Titel
Microelectronics (MIEL), 2012 28th International Conference on
ISSN
pending
Print_ISBN
978-1-4673-0237-1
Type
conf
DOI
10.1109/MIEL.2012.6222870
Filename
6222870
Link To Document