DocumentCode :
3647103
Title :
DC measurements method of the thermal resistance of power MOSFETs
Author :
Krzysztof Górecki;Janusz Zarębski
Author_Institution :
Department of Marine Electronics, Gdynia Maritime University, Poland
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
304
Lastpage :
308
Abstract :
In this paper a new direct-current measuring method of thermal resistance of power MOS transistors is proposed. The conception of this method and the way of its realization are presented. The discussion on the influence of selected factors on the accuracy of the elaborated method is included in this paper. The correctness of the method is verified by comparing the results of measurements obtained with the use of the new method with the results obtained with the infrared method.
Keywords :
"Electrical resistance measurement","Thermal resistance","Temperature measurement","Semiconductor device measurement","MOSFETs"
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Print_ISBN :
978-1-4577-2092-5
Type :
conf
Filename :
6226205
Link To Document :
بازگشت