DC measurements method of the thermal resistance of power MOSFETs

In this paper a new direct-current measuring method of thermal resistance of power MOS transistors is proposed. The conception of this method and the way of its realization are presented. The discussion on the influence of selected factors on the accuracy of the elaborated method is included in this paper. The correctness of the method is verified by comparing the results of measurements obtained with the use of the new method with the results obtained with the infrared method.