• DocumentCode
    3647116
  • Title

    Analytical drain current core model for undoped double gate MOS transistor

  • Author

    Paweł Sałek;Lidia Łukasiak;Andrzej Jakubowski

  • Author_Institution
    Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    A new analytical drain current model is proposed for symmetrical undoped double gate MOS transistors. It contains no fitting parameters and is physically-based.
  • Keywords
    "Logic gates","Numerical models","Integrated circuit modeling","Electric potential","Mathematical model","Analytical models","Accuracy"
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
  • Print_ISBN
    978-1-4577-2092-5
  • Type

    conf

  • Filename
    6226274
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647116