Title :
Analytical drain current core model for undoped double gate MOS transistor
Author :
Paweł Sałek;Lidia Łukasiak;Andrzej Jakubowski
Author_Institution :
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland
fDate :
5/1/2012 12:00:00 AM
Abstract :
A new analytical drain current model is proposed for symmetrical undoped double gate MOS transistors. It contains no fitting parameters and is physically-based.
Keywords :
"Logic gates","Numerical models","Integrated circuit modeling","Electric potential","Mathematical model","Analytical models","Accuracy"
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Print_ISBN :
978-1-4577-2092-5
