Fractal structures for low-resistance large area AlGaN/GaN power transistors

This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of V_BR >; 700V and on-state currents of I_D = 40A at V_GS = 1V.