Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

Random Telegraph Noise (RTN) and low frequency noise (LFN) properties were investigated for the first time in sub-100 nm 3-D stacked NAND flash memory with tube-type poly-Si channel structure. The 3-D stacked NAND flash memory showed higher noise power density of bit-line (BL) current (I_BL) by ~10 times than 32 nm planar NAND flash memory. The behavior of ΔI_BL was investigated with control-gate bias (V_CG), BL bias (V_BL) and pass bias (V_pass). As temperature (T) increases, capture and emission times becomes short. To understand poly-Si channel, planar poly-Si thin film transistors (TFT) with different grain size were prepared and analyzed in terms of noise, subthreshold swing (SS), and T.