• DocumentCode
    3647619
  • Title

    Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

  • Author

    Min-Kyu Jeong;Sung-Min Joe;Chang-Su Seo;Kyung-Rok Han;Eunseok Choi;Sung-Kye Park;Jong-Ho Lee

  • Author_Institution
    School of EECS and ISRC, Seoul National University, 151-742, Korea
  • fYear
    2012
  • fDate
    6/1/2012 12:00:00 AM
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    Random Telegraph Noise (RTN) and low frequency noise (LFN) properties were investigated for the first time in sub-100 nm 3-D stacked NAND flash memory with tube-type poly-Si channel structure. The 3-D stacked NAND flash memory showed higher noise power density of bit-line (BL) current (IBL) by ~10 times than 32 nm planar NAND flash memory. The behavior of ΔIBL was investigated with control-gate bias (VCG), BL bias (VBL) and pass bias (Vpass). As temperature (T) increases, capture and emission times becomes short. To understand poly-Si channel, planar poly-Si thin film transistors (TFT) with different grain size were prepared and analyzed in terms of noise, subthreshold swing (SS), and T.
  • Keywords
    "Noise","Flash memory","Logic gates","Thin film transistors","Grain size","Doping","Current density"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    2158-9682
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242458
  • Filename
    6242458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647619