Title :
Precision measurements of the quantum Hall effect in exfoliated graphene
Author :
Mirosław Woszczyna;Miriam Friedemann;Martin Götz;Eckart Pesel;Klaus Pierz;Thomas Weimann;Franz Ahlers
Author_Institution :
Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany
fDate :
7/1/2012 12:00:00 AM
Abstract :
In this work we present precision measurements of the integer quantum Hall effect in exfoliated graphene on GaAs substrate. In a relatively large graphene Hall bar area (150 μm long and 30 μm wide) dissipationless quantum Hall state was maintained up to about 10 μA and Hall resistance revealed plateau quantization with an accuracy of a few parts per billion. This demonstrates the perspectives for exfoliated graphene devices in quantum electrical resistance metrology.
Keywords :
"Resistance","Semiconductor device measurement","Standards","Epitaxial growth","Hall effect","Electrical resistance measurement","Gallium arsenide"
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
Print_ISBN :
978-1-4673-0439-9
Electronic_ISBN :
2160-0171
DOI :
10.1109/CPEM.2012.6251028