DocumentCode :
3647759
Title :
Precision measurements of the quantum Hall effect in exfoliated graphene
Author :
Mirosław Woszczyna;Miriam Friedemann;Martin Götz;Eckart Pesel;Klaus Pierz;Thomas Weimann;Franz Ahlers
Author_Institution :
Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
512
Lastpage :
513
Abstract :
In this work we present precision measurements of the integer quantum Hall effect in exfoliated graphene on GaAs substrate. In a relatively large graphene Hall bar area (150 μm long and 30 μm wide) dissipationless quantum Hall state was maintained up to about 10 μA and Hall resistance revealed plateau quantization with an accuracy of a few parts per billion. This demonstrates the perspectives for exfoliated graphene devices in quantum electrical resistance metrology.
Keywords :
"Resistance","Semiconductor device measurement","Standards","Epitaxial growth","Hall effect","Electrical resistance measurement","Gallium arsenide"
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2012 Conference on
ISSN :
0589-1485
Print_ISBN :
978-1-4673-0439-9
Electronic_ISBN :
2160-0171
Type :
conf
DOI :
10.1109/CPEM.2012.6251028
Filename :
6251028
Link To Document :
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