• DocumentCode
    3647759
  • Title

    Precision measurements of the quantum Hall effect in exfoliated graphene

  • Author

    Mirosław Woszczyna;Miriam Friedemann;Martin Götz;Eckart Pesel;Klaus Pierz;Thomas Weimann;Franz Ahlers

  • Author_Institution
    Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    512
  • Lastpage
    513
  • Abstract
    In this work we present precision measurements of the integer quantum Hall effect in exfoliated graphene on GaAs substrate. In a relatively large graphene Hall bar area (150 μm long and 30 μm wide) dissipationless quantum Hall state was maintained up to about 10 μA and Hall resistance revealed plateau quantization with an accuracy of a few parts per billion. This demonstrates the perspectives for exfoliated graphene devices in quantum electrical resistance metrology.
  • Keywords
    "Resistance","Semiconductor device measurement","Standards","Epitaxial growth","Hall effect","Electrical resistance measurement","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM), 2012 Conference on
  • ISSN
    0589-1485
  • Print_ISBN
    978-1-4673-0439-9
  • Electronic_ISBN
    2160-0171
  • Type

    conf

  • DOI
    10.1109/CPEM.2012.6251028
  • Filename
    6251028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3647759