DocumentCode :
3647784
Title :
Time dependent dielectric breakdown study of organo silicate glass materials over a wide range of k-values
Author :
Y. Barbarin;L. Zhao;P. Verdonck;M.R. Baklanov;K. Croes;Zs. Tőkei
Author_Institution :
Imec vzw, Kapeldreef 75, B-3001 Leuven, Belgium
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
The time dependent dielectric breakdown (TDDB) of four organo-silicate-glass (OSG) films with varying porosity (k=2.0, 2.5, 2.8 & 3.0) was investigated using metal-insulator-semiconductor (MIS) capacitors. Without any barrier, the dielectrics show lower TDDB-lifetimes under Cu ion drift conditions, where the OSG-2.8-film exhibits a better performance. Other results are that the damage caused by TaN/Ta barriers doesn´t significantly change the TDDB performance and that the OSG-2.0-film showed excellent TDDB lifetimes.
Keywords :
"Films","Electric fields","Electric breakdown","Capacitors","Reliability","Ions"
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Type :
conf
DOI :
10.1109/IITC.2012.6251576
Filename :
6251576
Link To Document :
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